
- 制造厂商:TI(德州仪器,Texas Instruments)
- 产品类别:电源管理
- 技术类目:电池管理 IC - 电池监测器和平衡器
- 功能描述:用于 1 个 SRAM 组的 SRAM 非易失性控制器 IC
- 点击这里打开及下载BQ2201的技术文档资料
- TI代理渠道,提供当日发货、严格的质量标准,满足您的目标价格

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.
During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.
The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
- Vin (Max) (V)
- 5.5
- Rating
- Catalog
BQ2201的完整型号有:BQ2201SN-N、BQ2201SN-NTR,以下是这些产品的关键参数及官网采购报价:
BQ2201SN-N,工作温度:-40 to 85,封装:SOIC (D)-8,包装数量MPQ:75个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网BQ2201SN-N的批量USD价格:2.66(1000+)
BQ2201SN-NTR,工作温度:-40 to 85,封装:SOIC (D)-8,包装数量MPQ:2500个,MSL 等级/回流焊峰值温度:Level-1-260C-UNLIM,引脚镀层/焊球材料:NIPDAU,TI官网BQ2201SN-NTR的批量USD价格:2.234(1000+)


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